PCB Technical - TSMC's 2nm process at the automotive lamp circuit board factory made a major breakthrough

According to the editor of the automotive lamp circuit board factory, TSMC's 2nm process research and development has made a major breakthrough. According to the supply chain, unlike 3nm and 5nm, which adopts FinFET architecture, TSMC has adopted a new multi-bridge channel field effect transistor (MBCFET) architecture at 2nm. The R&D progress is advanced and the industry is optimistic about 2023. In the second half of the year, the yield rate of the risky trial production can reach 90%, assisting in the future to continue to win large orders for advanced manufacturing processes from major manufacturers such as Apple and Nvidia, and slam Samsung.

The semiconductor manufacturing process is shrinking all the way, facing physical limits. The industry’s original concern is that Moore’s Law continues to be unfavorable, that is, the pace of advancing a process era every 18 months is blocked, which affects the development of advanced processes of semiconductor manufacturers such as TSMC.

Samsung expects to invest in the 5nm process at the end of the year, lagging behind TSMC. As TSMC has made a major breakthrough in the new 2nm process node, it is declared that TSMC will continue the development of Moore's Law, and it is more certain that the possibility of advancing towards 1nm will greatly increase in the future, and further expand the gap with Samsung. TSMC has never commented on orders and other dynamics, and so far has not disclosed the details of the 2nm process in a low-key manner, only saying that 2nm will be a new architecture.

Industry insiders pointed out that the 2020 SEMICON TAIWAN will debut on September 23. TSMC Chairman Liu Deyin was invited to give a keynote speech. The market focuses on TSMC’s advanced process research and development on artificial intelligence (AI), the fifth generation of mobile communications ( 5G) to promote the impact, and pay attention to the recent development of TSMC's advanced process research and development released by Liu Deyin.

It is reported that TSMC set up a 2nm project R&D team last year to find a feasible path for development. Considering cost, equipment compatibility, technology maturity and performance and other conditions, 2nm adopts the MBCFET structure based on the surround gate (GAA) process., To solve the problem of the physical limit of the current control leakage of FinFET due to process shrinkage, and the improvement of extreme ultraviolet (EUV) micro-development technology has made the key technology of nano sheet stacking developed by TSMC for many years more mature, and the progress of yield improvement is relatively slow. Expected to go well.

TSMC President Wei Zhejia revealed at the Yushan Science and Technology Association dinner a few days ago that each generation of TSMC's process advances, customer product speed and efficiency will increase by 30% to 40%, and power consumption can be reduced by 20% to 30%.

The supply chain believes that based on the current research and development progress of TSMC 2nm, it is expected to enter risky trial production in the second half of 2023, and officially mass production in 2024. TSMC previously revealed that 2nm R&D and production will be located in Baoshan, Hsinchu, planning four ultra-large fabs from P1 to P4, covering an area of more than 90 hectares.

Circuit board manufacturers believe that TSMC’s 2-nanometer yield and performance are worth looking forward to. It is expected to be adopted by major customers such as Apple, Nvidia, Qualcomm, and Supermicro after launch, and will gradually switch to 2-nanometer film. Especially after Nvidia acquired ARM, it is moving towards high-speed computing such as supercomputers and ultra-large-scale data centers. In the future, it will rely more on cooperation with TSMC.