PCB Material List - F4BMX-1/2 Teflon woven glass fabric copper-clad laminates with high permittivity

Types

F4BMX217

F4BMX220

F4BMX245

F4BMX255

F4BMX265

F4BMX275

Dielectric Constant

2.17

2.20

2.45

2.55

2.65

2.75

Types

F4BMX285

F4BMX294

F4BMX300

Dielectric Constant

2.85

2.94

3.0

Dimension(mm)

300*250 380*350 440*550 500*500 460*610 600*500

840*840 840*1200 1500*1000 1800*1000

For special dimension,customized laminates is available.

Thickness and Tolerance(mm)

Laminate thickness

0.25

0.5

0.8

1.0

Tolerance

±0.025

±0.05

±0.05

±0.05

Laminate thickness

1.5

2.0

3.0

4.0

5.0

Tolerance

±0.05

±0.075

±0.09

±0.10

±0.10

Laminate thickness

6.0

8.0

10.0

12.0

(Thickness≥5.0mm,dimension≤600x500 )

Tolerance

±0.12

±0.15

±0.18

±0.2

The laminate thickness includes the copper thickness. For special dimension,customized laminates is available.

Mechanical Strength

Warp

Thickness(mm)

Maximum Warp

Original board

Single side

Double side

0.25～0.5

0.030

0.050

0.025

0.8～1.0

0.025

0.030

0.020

1.5～2.0

0.020

0.025

0.015

3.0～5.0

0.015

0.020

0.010

Cutting/punching

Strength

Thickness1mm,no burrs after cutting,minimum space between two punching holes is 0.55mm,no delamination.

Thickness1mm,no burrs after cutting,minimum space between two punching holes is 1.10mm,no delamination.

Peel strength(1oz copper)

Normal state:≥18N/cm;No bubble, delamination, peel strength≥15N/cm(in the constant humidity and temperature, and keep in the melting solder of 260 degree Celsius±2 degree Celsius for 20 seconds).

Chemical Property

According to the properties of laminate,the chemical etching method for PCB can be used. The dielectric properties of laminate are not changed. The plating through hole can be done,but the sodium treatment or the plasma treatment must be used. The Hot Air Level temperature can not be higher than 253 degree Celsius,and can not be repeated.

Electrical Property

Name

Test condition

Unit

Value

Density

Normal state

g/ cm3

2.1～2.35

Moisture Absorption

Dip in the distilled water of 20±2 degree Celsius for24 hours

%

≤0.08

Operating Temperature

High-low temperature chamber

degree Celsius

-50 degree Celsius～+260 degree Celsius

Thermal Conductivity

W/m/k

0.3~0.5

CTE

(typical)

0～100 degree Celsius

(εr :2.1~2.3)

ppm/ degree Celsius

24(x)

34(y)

235(z)

CTE

(typical)

0～100 degree Celsius

(εr :2.3~2.9)

ppm/ degree Celsius

16(x)

20(y)

168(z)

CTE

(typical)

0～100 degree Celsius

(εr :2.9~3.38)

ppm/ degree Celsius

12(x)

15(y)

92(z)

Shrinkage Factor

2 hours in boiling water

%

 0.0002

Surface Resistivity

500V

DC

Normal state

M·Ω

≥2*105

Constant humidity and temperature

≥8*104

Volume Resistivity

Normal state

MΩ.cm

≥8*106

Constant humidity and temperature

≥2*105

Surface dielectric strength

Normal state

d=1mm(Kv/mm)

≥1.2

Constant humidity and temperature

≥1.1

Dielectric Constant

10GHZ

εr

2.17,2.20,2.45,2.55,2.65,2.75,2.85,2.95,3.0.

(±2%)

Dissipation Factor

10GHZ

tgδ

2.172.2

≤1*10-3

2.453.0

≤1.4*10-3